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负阻读音/繁体/五笔/英文翻译

负阻是什么意思？

· 基本释义

依恃险阻。

· 详细释义

依恃险阻。

汉 张衡 《东京赋》：“ 秦 负阻於二 关 ，卒开 项 而受 沛 。” 南朝 梁 陆倕 《石阙铭》：“ 夏首 凭固， 庸岷 负阻。” 明 罗日褧 《咸宾录·南夷志一·安南》：“ 桓 （ 黎桓 ）志愈骄，负阻山河，屡为寇害，渐失藩臣之礼矣。”

负阻的近反义词？

负阻近义词：抱歉，查无负阻的近义词

负阻反义词：抱歉，查无负阻的反义词

负阻词语接龙

（~负阻~）在开头的接龙：阻挡，阻止，阻力，阻击，阻挠，阻塞，阻抗，阻隔，阻拦，阻截，阻绝，阻抑，阻遏，阻尼，阻值，阻扰，阻断，阻卜，阻留，阻阸

（~负阻~）在结尾的接龙：劝阻，拦阻，险阻，受阻，堙阻，奥阻，顿阻，掯阻，挠阻，邪阻，断阻，辽阻，留阻，困阻，躭阻，声阻，夐阻，修阻，依阻，截阻

暂时无法为您进行负阻的词语顺序接龙!

用负阻怎么造句？

您好，暂未查询到负阻造句的内容。

本文提出了一种温度系数可以设定的负阻电路。

In this paper a negative resistance circuit with presetable temperature factor is presented.

本文就广义阻抗变换器的负阻特性进行了分析。

The negative impedence property of generalized impedence converter is analysed in this paper.

最后利用电荷积累效应解释了负阻区本征双稳态特性。

Finally the intrinsic bistability in negative region was explained by the electric accumulation effect.

众所周知，“负阻特性”可以被应用在产生震荡的电路中。

It's pretty well known that "negative resistance" can be used to generate oscillations in electronic circuits.

研究了一种利用耦合负阻法制作微波有源带通滤波器的方法。

A coupled negative resistance method for building the microwave active band-pass filters is described in this paper.

本文探讨具有两个负阻区的微分负阻器件的电路合成法实现问题。

The negative differential resistance devices with two negative resistance regions (twin-peak NDR devices) can be built by circuit synthesis approach.

光电双向负阻晶体管(PBNRT)是一种新型S型光电负阻器件。

The photo-bidirectional negative resistance transistor (PBNRT) is a novel "s" type photoelectric negative resistance device.

发现I—V特性曲线在高真空中呈现负阻特征，在大气中表现为记忆特征。

The I-V characteristic curve of MOM presents a negative resistance feature at low atmospheric pressure., and a memory effect in air.

模拟分析表明，一种反向势垒的存在及其击穿，应是引起负阻现象的原因。

An inner reverse barrier is simulated with the I-V curves, as shows that the negative resistance phenomenon is caused by the break down of the reverse barrier.

本文对它的光电负阻特性进行了数值模拟和实验研究，给出了器件等效电路。

Its photoelectric negative resistance characteristics were investigated both by experiment and numerical simulation and its equivalent circuit is proposed.

本文用小信号理论计算了其负阻和噪声性能，并进行了大信号性能的近似分析。

The negative resistance and the noise performances are calculated by means of small signal theory. The large-signal performances are also approximately described.

由于光电负阻器件具有双稳和自锁特性，这种非线性光耦合器具有响应保持功能。

With the bistability and self locking of the silicon photo negative resistance devices, these non linear photoisolators exhibit response maintaining function for the input signal.

本文从双向负阻晶体管(BNRT)的等效电路出发，导出了BNRT的工作模式。

In this paper, the operation modes of the BNRT have been derived from its equivalent circuit.

本文报道了MIM隧道二极管的发光和负阻现象，用梯形势垒计算了电流-电压特性。

This paper reports the light emission from MIM tunnel diode and Negative Differential Resistance (NDR) in its I-V characteristic curve.

该结构降低了器件的寄生电容，改善了敏感薄膜的负阻特性，适用于共振隧穿效应陀螺。

The structure can reduce the parasitic capacitance of the sensor, improve the negative resistance characteristics of the sensitive film, and be used in micro gyroscope.

通过若干应用实例说明上述工具对处理微波有源网络（特别是包含负阻电路）问题的有效性。

Several examples for applications are cited. They illustrate that these tools are very useful in dealing with microwave active circuits, especially those including negative resistances.

将发光器件和硅光电负阻器件面对面地封装在一起，其间实现电隔离，构成一种新型光耦合器。

A new type of photo isolator has been developed by packing light emitting devices with silicon photo negative resistance devices face to face to realize electrical isolation.

模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有S型负阻特性的两端器件。

The experimental results of analogue circuit show that type-S negative resistance can be obtained by using two like polarity transistors with various circuit connections.

探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。

The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.

全面介绍了从硅光电负阻器件上发现的几种光电控制功能，为进一步开发应用这类器件奠定了基础。

Various of photo-controlled functions discovered from silicon photo-negative resistance devices are presented in this paper.

在I-V特性曲线上具有双微分负阻的三稳态共振隧穿器件，室温下可以达到较高的电流峰谷比5。

The tristable resonant tunneling devices(RTD)with a double negative differential resistance in its I-V characteristics have a high current ratio(5.

根据BNRT不同工作状态下的内部电势、电子浓度和空穴浓度分布，解释了其S型负阻特性的产生机理。

According to the distribution of potential, electron and hole in the BNRT at different stages, the mechanism inducing S-type negative resistance characteristics is explained.

最后，对不同结构和工艺参数的三端bnrt进行了模拟，总结出器件结构和工艺参数对负阻特性的影响。

Finally, 3-terminal BNRT with different structure and process parameters is simulated, and the influence of device structure and process parameters upon negative characteristics is summarized.

在对负阻元器件特性进行研究和分析的基础上引出负阻效应的概念，对负阻效应产生方式和原理进行了论述。

Based on the research on the characteristic of the dynatron component and parts of an apparatus, the concept of dynatron effect was educed, and the engendering mode and principle was discussed.

本文提出的浮地频变负阻新电路具有有源和无源元件少、灵敏度低、稳定性好、无需调整和易于实现等优点。

A novel realization of floating FDNR proposed in the paper has advantages such as fewer passive and active elements, lower sensitivity, good stability, no need of adjustment, easy realization.

为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。

In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.

从变量约束关系出发分析了负阻元件存在的可能性及其物理性质，阐述了负阻元件与负阻抗变换器的关系及其应用。

In this paper, based on the characteristic of the impedance converter, some methods for its three-port network parameters are analyzed.

在此实验基础上研制得到一种双向两端S型负阻器件(TBNRD器件).本文还对该器件产生负阻的原因进行了理论分析。

Based on this, a Two-terminal Bidirectional negative resistance Device (TBNRD) is fabricated and the theory of the negative resistance is studied.

对一个SOI结构的负阻效应和瞬态特性的模拟结果表明，该程序能够正确模拟器件发热情况以及自热对器件特性的主要影响。

The results of negative resistance effect and transient characteristics of a SOI structure prove that the program can correctly simulate the main phenomena caused by self heating effect.

对负阻效应在实际几种元器件中的存在及特性进行了研究和证明，重点研究了利用运算放大器构成的负阻抗变换器的变换阻抗性质。

The existence and characteristics of dynatron effect in the components and parts of several apparatus have been studied and proved in this paper.

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